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• W2000863947 abstract "Ion implantation is a flexible process technology for introducing an array of doping or compensating impurities into semiconductors. As the crystal quality of the group III-nitride materials continues to improve, ion implantation is playing an enabling role in exploring new dopant species and device structures. In this paper we review the recent developments in ion implantation processing of these materials with a particular emphasis on how this technology has brought new understanding to this materials system. In particular, the use of ion implantation to characterize impurity luminescence, doping, and compensation in III-nitride materials is reviewed. In addition, we address the nature of implantation induced damage in GaN which demonstrates a very strong resistance to amorphization while at the same time forming damage that is not easily removed by thermal annealing. Finally, we review the coupling of implantation with high temperature rapid thermal annealing to better understand the thermal stability of these materials and the redistribution properties of the common dopant (Si, O, Be, Mg, Ca, and Zn)." @default.
• W2000863947 created "2016-06-24" @default.
• W2000863947 creator A5033274212 @default.
• W2000863947 date "1997-06-01" @default.
• W2000863947 modified "2023-10-14" @default.
• W2000863947 title "Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies" @default.
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• W2000863947 doi "https://doi.org/10.1016/s0022-0248(97)00076-6" @default.
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