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• W2000865900 abstract "I studied the theoretical compositional variation-slope of ternary crystals during growth for the ramp-cooling solution growth. Calculation was based on the condition that phase equilibrium between the crystal and solution was maintained together with constancy between the transported and incorporated mass at the crystal/solution interface at the same time. The compositional variation-slope was calculated for In1-xGaxAs grown from In-Ga-As solutions by ramp-cooling. I found two compositional regions for the positive and negative variation-slopes on solution compositional maps. In the positive region, the Ga composition, x, in In1-xGaxAs increases with crystal growth. The positive region is the smaller XLAs part of the maps. The existence of the positive and negative regions was confirmed by experiments growing In1-xGaxAs layers by liquid phase epitaxy. Experimental and calculated results agree well." @default.
• W2000865900 created "2016-06-24" @default.
• W2000865900 creator A5060905555 @default.
• W2000865900 date "1991-12-01" @default.
• W2000865900 modified "2023-09-26" @default.
• W2000865900 title "Calculation of the compositional variation-slope of In1-xGaxAs grown from In-Ga-As solution by ramp-cooling" @default.
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• W2000865900 doi "https://doi.org/10.1016/0022-0248(91)90409-x" @default.
• W2000865900 hasPublicationYear "1991" @default.
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