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• W2000869532 abstract "(111) preferred orientated ferroelectric PbZr0.3Ti0.7O3 (PZT) thin films with grain size of 300-500 nm, and root-mean-square (RMS) roughness of 2.927 nm were prepared by using radio frequency magnetron sputtering process. Piezoresponse force microscopy (PFM) has been used to write complex ferroelectric domain patterns using a biased sweeping PFM tip. Subsequent imaging of switched domain patterns was performed. The stabilization of the written domain was investigated by inverse biased tip scanning. The results indicate that these films are suitable for submicron scale domain writing, and the resulted domain are affected by the condition of crystalline boundary. The written domain is superficial and can be easily erased by inverse tip-applied electric field" @default.
• W2000869532 created "2016-06-24" @default.
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• W2000869532 date "2012-06-01" @default.
• W2000869532 modified "2023-10-18" @default.
• W2000869532 title "Ferroelectric Domain Patterns Writing in PbZr_0.3Ti_0.7O₃ Thin Films Using a Biased Sweeping PFM Tip" @default.
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• W2000869532 doi "https://doi.org/10.4028/www.scientific.net/amr.534.173" @default.
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