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- W2000872649 abstract "This paper describes the influence of e-beam irradiation and constant voltage stress on the electrical characteristics of metal–insulator–semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N ultra-thin (1 and 2 nm) films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. The current flow mechanism was analyzed on the basis of pre-breakdown, soft-breakdown and post-breakdown current–voltage (J–V) experiments. Based on α–V analysis (α=d[ln(J)]/d[ln(V)]) of the J–V characteristics, a non-ideal Schottky diode-like current mechanism with different parameters in various ranges of J–V characteristics is established, which limits the current flow in these structures independent of irradiation dose or magnitude of applied voltage during stress." @default.
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- W2000872649 date "2010-11-01" @default.
- W2000872649 modified "2023-09-26" @default.
- W2000872649 title "The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high-k double layer (HfTiSiO:N and HfTiO:N) dielectrics" @default.
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- W2000872649 doi "https://doi.org/10.1016/j.mee.2009.09.010" @default.
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