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- W2000875781 abstract "We investigate the impact of amorphization and C co-implantation on B diffusion and activation properties after conventional spike rapid thermal annealing (RTA). We observe that after complete recrystallization at 600°C the B tail deepens by 5nm (at 5×1018at.∕cm3) due to B diffusion in a-Si. After spike RTA it becomes 12nm deeper with respect to an as-implanted profile, which proves that both diffusion mechanisms in a-Si and c-Si are important. However, the B diffusion in c-Si is sensitive to the fraction of substitutional C incorporated into c-Si. The best junction depth is Xj=16.5nm, with abruptness of 2nm/decade and Rs=583Ω∕◻." @default.
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- W2000875781 date "2006-08-07" @default.
- W2000875781 modified "2023-10-01" @default.
- W2000875781 title "Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon" @default.
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- W2000875781 doi "https://doi.org/10.1063/1.2227863" @default.
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