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• W2000894745 abstract "Al(Ga)InP subwavelength structures (SWS) were fabricated and optimized through thermally dewetted Au nanotemplate and ICP pattern-transfer. When λ< 900 nm, most AlGaInP nanostructures exhibit the reflectivity of less than 2% and insensitive to the incident angle up to 45°. When λ extends to 1800 nm, the reflectivity of less than 5% over 0°-45° is achieved in the optimized nanostructure, which benefits III-V multi-junction solar cells to improve their efficiency. Moreover, not only is such cost-effective nano-fabrication process completely compatible with the other processing of III-V solar cells, but their defined disordered SWS benefit the antireflection performance over broadband and wide view according to the comparison between the measurement and simulation results from AlGaInP SWS." @default.
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• W2000894745 date "2012-01-12" @default.
• W2000894745 modified "2023-09-23" @default.
• W2000894745 title "Broadband quasi-omnidirectional antireflection AlGaInP window for III-V multi-junction solar cells through thermally dewetted Au nanotemplate" @default.
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• W2000894745 doi "https://doi.org/10.1364/ome.2.000173" @default.
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