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• W2000896146 abstract "This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions." @default.
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• W2000896146 date "2012-09-01" @default.
• W2000896146 modified "2023-10-16" @default.
• W2000896146 title "WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY" @default.
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• W2000896146 doi "https://doi.org/10.1142/s2010324712400012" @default.
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