FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000900802> ?p ?o ?g. }

• W2000900802 endingPage "10226" @default.
• W2000900802 startingPage "10221" @default.
• W2000900802 abstract "Aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) is currently under investigation for use as a high-κ gate dielectric alternative to SiO2. Cluster calculations employing hybrid density functional theory have been carried out to examine the chemical reaction pathways between the ALD precursors, trimethylaluminum (TMA) and H2O, with the H/Si(100)-2×1 surface. Results obtained using Si9H14 and Si15H20, dimer and double dimer clusters to represent the surface active site are in good agreement, providing a consistent view of reaction energetics on the H/Si(100)-2×1 surface. The adsorption energies for TMA and H2O on the surface are calculated to be 0.02 and 0.15 eV, respectively. For the reaction between H2O and the H/Si(100)-2×1 surface, hydroxylation of the surface accompanied by loss of H2 was found to be the preferred pathway having an activation energy and overall reaction enthalpy of 1.60 eV and −0.75 eV, both of which are ⩾0.70 eV lower than the corresponding values for the possible H/D exchange reaction. TMA exposure of the H/Si(100)-2×1 surface favors the deposition of –Al(CH3)2 with loss of CH4, having a barrier height of 1.30 eV and reaction enthalpy of −0.31 eV, which are 0.10 and 0.40 eV lower than the surface methylation pathway (H/CH3 exchange) and 2.64 and 0.45 eV lower in energy than the H2 loss reaction, that results in the deposition of –CH2–Al(CH3)2 to the surface. Therefore, the dominant reactions identified in this work are those with direct implication in the Al2O3 ALD growth mechanism, leading to the formation of Si–O and Si–Al species on the H/Si(100)-2×1 surface." @default.
• W2000900802 created "2016-06-24" @default.
• W2000900802 creator A5000577448 @default.
• W2000900802 creator A5011183754 @default.
• W2000900802 date "2003-05-20" @default.
• W2000900802 modified "2023-10-17" @default.
• W2000900802 title "Atomic layer deposition of Al2O3 on H-passivated Si. I. Initial surface reaction pathways with H/Si(100)-2×1" @default.
• W2000900802 cites W1487069997 @default.
• W2000900802 cites W1496024054 @default.
• W2000900802 cites W1500049300 @default.
• W2000900802 cites W1965258289 @default.
• W2000900802 cites W1965368032 @default.
• W2000900802 cites W1967780419 @default.
• W2000900802 cites W1971275758 @default.
• W2000900802 cites W1973092964 @default.
• W2000900802 cites W1976952677 @default.
• W2000900802 cites W1981675606 @default.
• W2000900802 cites W1996003259 @default.
• W2000900802 cites W1996756045 @default.
• W2000900802 cites W2000618238 @default.
• W2000900802 cites W2003645630 @default.
• W2000900802 cites W2006899770 @default.
• W2000900802 cites W2019676283 @default.
• W2000900802 cites W2023271753 @default.
• W2000900802 cites W2024484920 @default.
• W2000900802 cites W2032243255 @default.
• W2000900802 cites W2033990154 @default.
• W2000900802 cites W2043759904 @default.
• W2000900802 cites W2071942212 @default.
• W2000900802 cites W2072150903 @default.
• W2000900802 cites W2076874689 @default.
• W2000900802 cites W2077805528 @default.
• W2000900802 cites W2080878489 @default.
• W2000900802 cites W2084679011 @default.
• W2000900802 cites W2094642658 @default.
• W2000900802 cites W2101781928 @default.
• W2000900802 cites W2143981217 @default.
• W2000900802 doi "https://doi.org/10.1063/1.1571513" @default.
• W2000900802 hasPublicationYear "2003" @default.
• W2000900802 type Work @default.
• W2000900802 sameAs 2000900802 @default.
• W2000900802 citedByCount "50" @default.
• W2000900802 countsByYear W20009008022012 @default.
• W2000900802 countsByYear W20009008022013 @default.
• W2000900802 countsByYear W20009008022014 @default.
• W2000900802 countsByYear W20009008022015 @default.
• W2000900802 countsByYear W20009008022016 @default.
• W2000900802 countsByYear W20009008022018 @default.
• W2000900802 countsByYear W20009008022019 @default.
• W2000900802 countsByYear W20009008022021 @default.
• W2000900802 countsByYear W20009008022022 @default.
• W2000900802 crossrefType "journal-article" @default.
• W2000900802 hasAuthorship W2000900802A5000577448 @default.
• W2000900802 hasAuthorship W2000900802A5011183754 @default.
• W2000900802 hasConcept C113196181 @default.
• W2000900802 hasConcept C121332964 @default.
• W2000900802 hasConcept C147597530 @default.
• W2000900802 hasConcept C147789679 @default.
• W2000900802 hasConcept C150394285 @default.
• W2000900802 hasConcept C151730666 @default.
• W2000900802 hasConcept C152365726 @default.
• W2000900802 hasConcept C178790620 @default.
• W2000900802 hasConcept C185592680 @default.
• W2000900802 hasConcept C2779227376 @default.
• W2000900802 hasConcept C2779546866 @default.
• W2000900802 hasConcept C2816523 @default.
• W2000900802 hasConcept C29563950 @default.
• W2000900802 hasConcept C3288061 @default.
• W2000900802 hasConcept C62520636 @default.
• W2000900802 hasConcept C64297162 @default.
• W2000900802 hasConcept C69544855 @default.
• W2000900802 hasConcept C86803240 @default.
• W2000900802 hasConcept C95121573 @default.
• W2000900802 hasConceptScore W2000900802C113196181 @default.
• W2000900802 hasConceptScore W2000900802C121332964 @default.
• W2000900802 hasConceptScore W2000900802C147597530 @default.
• W2000900802 hasConceptScore W2000900802C147789679 @default.
• W2000900802 hasConceptScore W2000900802C150394285 @default.
• W2000900802 hasConceptScore W2000900802C151730666 @default.
• W2000900802 hasConceptScore W2000900802C152365726 @default.
• W2000900802 hasConceptScore W2000900802C178790620 @default.
• W2000900802 hasConceptScore W2000900802C185592680 @default.
• W2000900802 hasConceptScore W2000900802C2779227376 @default.
• W2000900802 hasConceptScore W2000900802C2779546866 @default.
• W2000900802 hasConceptScore W2000900802C2816523 @default.
• W2000900802 hasConceptScore W2000900802C29563950 @default.
• W2000900802 hasConceptScore W2000900802C3288061 @default.
• W2000900802 hasConceptScore W2000900802C62520636 @default.
• W2000900802 hasConceptScore W2000900802C64297162 @default.
• W2000900802 hasConceptScore W2000900802C69544855 @default.
• W2000900802 hasConceptScore W2000900802C86803240 @default.
• W2000900802 hasConceptScore W2000900802C95121573 @default.
• W2000900802 hasIssue "22" @default.
• W2000900802 hasLocation W20009008021 @default.
• W2000900802 hasOpenAccess W2000900802 @default.
• W2000900802 hasPrimaryLocation W20009008021 @default.
• W2000900802 hasRelatedWork W1993452975 @default.
• W2000900802 hasRelatedWork W2009461616 @default.

• next