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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000901685> ?p ?o ?g. }

• W2000901685 abstract "A first-principles study of the ${mathrm{BO}}_{2}$ complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An ${mathrm{O}}_{2}$ dimer distant from B causes only weak carrier recombination, which nevertheless drives ${mathrm{O}}_{2}$ diffusion under light to form the ${mathrm{BO}}_{2}$ complex. Although ${mathrm{BO}}_{2}$ and ${mathrm{O}}_{2}$ produce nearly identical defect levels in the band gap, the recombination at ${mathrm{BO}}_{2}$ is substantially faster than at ${mathrm{O}}_{2}$ because the charge state of the latter inhibits the hole capture step of recombination." @default.
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• W2000901685 date "2006-12-22" @default.
• W2000901685 modified "2023-10-16" @default.
• W2000901685 title "Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon" @default.
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• W2000901685 doi "https://doi.org/10.1103/physrevlett.97.256602" @default.
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