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- W2000901995 abstract "Investigations of low-temperature photoluminescence were carried out on Cd1−xMnxTe films grown by pulsed laser evaporation and epitaxy on nominally GaAs(111), nominally Cd1−yZnyTe(001) substrates, and Cd1−yZnyTe(001) vicinal substrates. Excitonic and impurity related transitions were clearly identified in the photoluminescence spectra. Very narrow exciton peaks with full width at half maximum of less than 10 meV show that high-quality films can be produced with this growth technique. Our results suggest that the extrinsic luminescence peaks originate from the accumulation of defects or impurities at the different interfaces." @default.
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- W2000901995 date "1993-09-01" @default.
- W2000901995 modified "2023-09-26" @default.
- W2000901995 title "Low-temperature photoluminescence study of Cd1−xMnxTe films grown by pulsed laser evaporation and epitaxy" @default.
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- W2000901995 doi "https://doi.org/10.1016/0039-6028(93)90123-2" @default.
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