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• W2000907191 abstract "The low-energy multipulse excimer laser annealing (LEM-ELA) is proposed to anneal the nanostructure of nanocrystal (NC) embedded in a SiO2 thin film without causing atomic diffusion and damaging the NCs, since the LEM-ELA combining the advantages of laser annealing and UV curing features rapid heating and increasing oxide network connectivity. A Fourier transform infrared spectroscopy (FTIR) characterization of SiO2 thin films annealed using LEM-ELA indicated that the quality was improved through the removal of water-related impurities and the reconstruction of the network Si?O?Si bonds. Then, LEM-ELA was applied to a SiO2 thin film embedded with Au NCs, which were fabricated as MOS capacitors. The charge retention was greatly improved and the percentage of retained charges was about 10% after 3?????108?s. To investigate and differentiate the effects of LEM-ELA on charges stored in both oxide traps and in the Au NCs, a double-mechanism charge relaxation analysis was performed. The results indicated that the oxide traps were removed and the confinement ability of Au NCs was enhanced. The separated memory windows contributed from the charges in Au NCs and those in oxide traps were obtained and further confirmed that the LEM-ELA removed oxide traps without damaging the Au NCs." @default.
• W2000907191 created "2016-06-24" @default.
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• W2000907191 date "2015-01-15" @default.
• W2000907191 modified "2023-09-27" @default.
• W2000907191 title "Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded MOS capacitors" @default.
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• W2000907191 doi "https://doi.org/10.1088/0022-3727/48/5/055101" @default.
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