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- W2000908516 abstract "Wurtzite silicon nanocrystals have been fabricated by using the cluster-beam evaporation technique. The X-ray diffraction patterns of the as-deposited films indicate the presence of Si crystallites with sizes in the nanometer range. The Bragg angles of the reflection peaks are not of the ordinary diamond structure but of the wurtzite structure. The Raman spectra further support the presence of the wurtzite structure. X-ray photoelectron spectroscopy shows that these Si nanocrystals are enclosed in the oxide matrix. It is hypothesized that the wurtzite Si phase is formed by the nonequilibrium cluster formation process through adiabatic gaseous expansion." @default.
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- W2000908516 date "2001-01-01" @default.
- W2000908516 modified "2023-09-28" @default.
- W2000908516 title "Wurtzite Silicon Nanocrystals Deposited by the Cluster-Beam Evaporation Technique" @default.
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- W2000908516 doi "https://doi.org/10.1002/1521-3951(200101)223:1<41::aid-pssb41>3.0.co;2-v" @default.
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