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- W2000908538 abstract "The elastic interactions generated by the presence of a biperiodic network, more precisely hexagonal, of misfit dislocations in the interfacing of a thin bicristal have been simulated numerically while considering an anisotropic elasticity for each crystal. The representation of the normal equi-stress near the dislocation segments and near of the triple node of hexagonal cell permits to detect the stress concentration zone du to elastic field for InAs/(111)GaAs system, because, in the category of semiconductors, this is an ideal system which exhibit the presence of edge dislocations type parallels to the free surfaces by S.T.M.[1]." @default.
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- W2000908538 date "2004-04-30" @default.
- W2000908538 modified "2023-09-26" @default.
- W2000908538 title "Campo interfacial de tensiones generado por una red biperiódica hexagonal de dislocaciones en un bicristal delgado de InAs/(111)GaAS" @default.
- W2000908538 doi "https://doi.org/10.3989/cyv.2004.v43.i2.579" @default.
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