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- W2000910700 abstract "Cathodoluminescence has been applied to study 1-μm-thick Zn1-xMgxSySe1-y alloys grown by molecular beam epitaxy. The observed cathodoluminescence spectra show the main band transition at 2.9 eV and a broad defect band around 2.2 eV. The analysis of the band intensities at different electron-beam current densities shows different saturation behaviour of the defect band intensities for the samples. The saturation intensity and the luminescence lifetime correlate with the defect luminescence intensity and concentration. This is the reason of luminescence colour changes in dependence on the electron-beam current density. These results were applied to comparative evaluation of the luminescent defect density. A respective cathodoluminescence imaging was used for observation of structural defects in the surface plane and at the ZnMgSSe-layer/GaAs-buffer interface. It enables an express non-destructive analysis of defect density in the layers and heterostuctures. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2000910700 date "2010-05-21" @default.
- W2000910700 modified "2023-10-16" @default.
- W2000910700 title "Cathodoluminescence of wide‐band‐gap II‐VI quaternary alloys" @default.
- W2000910700 doi "https://doi.org/10.1002/pssc.200983278" @default.
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