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- W2000911380 abstract "A new type of blue-light emitting diode (LED) has been fabricated by using epitaxial ZnS films on GaAs by low-pressure metalorganic vapor phase epitaxy. The emission mechanism has been investigated and the LED structure has been optimized. A bright blue emission was observed with a maximum quantum efficiency of 0.3%." @default.
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- W2000911380 title "New type blue-light emitting diode using epitaxial ZnS films grown on GaAs by MOVPE" @default.
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- W2000911380 doi "https://doi.org/10.1016/0921-4526(93)90286-f" @default.
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