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- W2000915507 abstract "This paper reviews the recent progress of the technique and understanding of the mechanism for heteroepitaxial growth of nitride films on highly mismatched substrate (HGHMS) which was mainly developed by us. Mechanism of the HGHMS revealed by electron microscopy observation and application of the newly developed HGHMS to the fabrication of short wavelength, especially blue and UV light emitting diode are discussed." @default.
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- W2000915507 date "1993-03-01" @default.
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- W2000915507 title "Growth of GaN and AlGaN for UV/blue p-n junction diodes" @default.
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- W2000915507 doi "https://doi.org/10.1016/0022-0248(93)90352-w" @default.
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