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- W2000918063 abstract "Self-aligned source/drain (S/D) graphene field-effect transistors (GFETs) with extremely small access lengths were successfully fabricated using a simple device fabrication process without sidewall spacer formation. The self-aligned S/D GFET exhibits superior electrical characteristics, such as the intrinsic carrier mobility of 6100 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs, the gate leakage current of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-10</sup> -10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-9</sup> A and the contact resistance of 412 Ωμm. In particular, a cutoff frequency of 13 GHz was achieved with a rather large gate length ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>LG</i> = 3 μm), which demonstrates the promising future of this self-aligned GFET." @default.
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- W2000918063 date "2013-07-01" @default.
- W2000918063 modified "2023-09-23" @default.
- W2000918063 title "High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique" @default.
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- W2000918063 doi "https://doi.org/10.1109/jproc.2013.2258651" @default.
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