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- W2000944850 abstract "Si-rich SiO2 films were deposited onto Si and quartz substrates by r.f. co-sputtering, and then annealed under vacuum at temperatures between 500 to 900°C for 1 hour. A combination of high resolution transmission electron microscopy, optical ellipsometry, and UV/VIS and FTIR photospectrometry were used to investigate the microstructures and optical properties of the co-sputtered films before and after annealing. The as-deposited films consisted of a fully amorphous SiOx(I < × < 2) structure. After annealing, the films consisted of clusters of crystalline Si with average sizes in the range between 3nm and 8nm embedded in a stoichiometric SiO2 amorphous matrix." @default.
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- W2000944850 date "1995-01-01" @default.
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- W2000944850 title "Fabrication of Si/SiO2 nanocomposite thin films" @default.
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- W2000944850 doi "https://doi.org/10.1016/0965-9773(95)00189-1" @default.
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