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- W2000948650 abstract "Resistive switching effect was demonstrated in the Ti/Pr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.7</sub> Ca <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.3</sub> MnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> (PCMO)/LaNiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect." @default.
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- W2000948650 date "2014-07-01" @default.
- W2000948650 modified "2023-09-24" @default.
- W2000948650 title "Resistive Switching in Perovskite-Oxide Capacitor-Type Devices" @default.
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- W2000948650 doi "https://doi.org/10.1109/tmag.2013.2297408" @default.
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