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• W2000949086 abstract "Dysprosium scandate (DyScO3) thin films were deposited on Si substrates using metal-organic chemical vapor deposition. Individual source precursors of Dy and Sc were used and deposition temperatures ranged from 480to700°C. Films were amorphous with low root mean square roughness (⩽2Å) and were stable up to 1050°C annealing. Electrical characterization yielded C-V curves with negligible hysteresis (&lt;10mV), high dielectric constant (∼22), and low leakage currents. The electrical properties of the DyScO3∕SiOx∕Si stacks were stable up to 800°C for films on native oxide; however, this limit increased to 900°C for films on special chemically grown oxide, suggesting further improvement with proper diffusion barrier." @default.
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• W2000949086 date "2006-12-04" @default.
• W2000949086 modified "2023-10-02" @default.
• W2000949086 title "Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition" @default.
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• W2000949086 doi "https://doi.org/10.1063/1.2402121" @default.
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