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• W2000952419 endingPage "532" @default.
• W2000952419 startingPage "530" @default.
• W2000952419 abstract "In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switching process except for the oxygen ions. Owing to the twofold chemical reaction, the high resistance states are randomly distributed in a wide range. Schottky emission can be obtained through conduction current fitting, and a reaction model is established to demonstrate the special behaviors of the two types of ions, which also clarifies the gradual change of current fitting results." @default.
• W2000952419 created "2016-06-24" @default.
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• W2000952419 date "2014-05-01" @default.
• W2000952419 modified "2023-10-14" @default.
• W2000952419 title "Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory" @default.
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• W2000952419 doi "https://doi.org/10.1109/led.2014.2311295" @default.
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