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- W2000962964 abstract "Epitaxial layers of InP were grown on semi-insulating InP substrates by liquid phase epitaxy. The introduction of small amounts (4 × 10−4 −1 × 10−3 atomic fraction) of the rare earth dysprosium in the melt resulted in a substantial increase in electron mobility and a reduction in the electron concentration. The mobility increased from 2040 cm2 V−1 s−1 (without dysprosium) to 4200 cm2 V−1 s−1 (with dysprosium) at 300 K and from 2480 cm2 V−1 s−1 to 19 250 cm2 V−1 s−1 at 83 K. The carrier concentration accordingly decreased from 2.3 × 1017 to 4 × 1015 cm−3 (300 K). The results of secondary-ion mass spectrometry and photoluminescence measurements indicate that reduction in the dominant impurity silicon by gettering is responsible for the improved properties." @default.
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- W2000962964 date "1992-02-01" @default.
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- W2000962964 title "Liquid phase epitaxy growth of high purity InP using rare earth dysprosium gettering" @default.
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- W2000962964 doi "https://doi.org/10.1016/0921-5107(92)90011-w" @default.
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