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- W2000969788 abstract "We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism at low drain bias (-0.1 V) while thermionic field emission dominate at moderately high drain bias. At high drain bias (>-5.0 V), tunneling was observed to be the dominant leakage mechanism." @default.
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- W2000969788 modified "2023-10-06" @default.
- W2000969788 title "Leakage current mechanism in sub-micron polysilicon thin-film transistors" @default.
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- W2000969788 doi "https://doi.org/10.1109/16.506772" @default.
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