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- W2000970780 abstract "Abstract We characterized nitride growth on SiC substrates by using surface sensitive in situ monitoring of shallow angle reflectance (SAR). The growth initiation of the AlN wetting layer on SiC substrate, and that of GaN on the AlN wetting layer are studied. Flat growth of the AlN wetting layer on SiC substrate is achieved by excess source supply at the start, and the growth evolution of GaN on the AlN wetting layer depends not only on the source flow rate but also on the species of metalorganic source. Flat GaN and AlN wetting layer growth is achieved by intentional nucleation." @default.
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- W2000970780 date "2000-12-01" @default.
- W2000970780 modified "2023-10-17" @default.
- W2000970780 title "Nucleation control in MOVPE of group III-nitrides on SiC substrate" @default.
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- W2000970780 doi "https://doi.org/10.1016/s0022-0248(00)00703-x" @default.
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