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- W2000978622 abstract "We report on the effect of halide doping on the Aerosol-assisted Chemical Vapour Deposition of tin oxide. Specifically, the importance of precursor interactions is highlighted. A halide exchange reaction involving part substitution of the tin precursor is believed to occur in the solvent; the complex acting as a marker for improved films with improved transparent-conducting properties. Precursor mixtures of butyltin trichloride and potassium halide (X = F, Cl, Br, I) in propan-2-ol were deposited at a substrate temperature of 450 °C using air carrier gas. Hall Effect results indicate that fluorine gave the best performing n-type transparent conducting thin films that exhibited high optical transparency (> 80% at 550 nm) and resistivity values of 4.9 × 10− 4 Ω.cm, with charge carrier density and carrier mobility values of 8.85 × 1020 cm− 3 and 15 cm3/V.s respectively. Such parameters yield high figures of merit." @default.
- W2000978622 created "2016-06-24" @default.
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- W2000978622 date "2013-04-01" @default.
- W2000978622 modified "2023-10-18" @default.
- W2000978622 title "Halide doping effects on transparent conducting oxides formed by aerosol assisted chemical vapour deposition" @default.
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- W2000978622 doi "https://doi.org/10.1016/j.tsf.2012.10.110" @default.
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