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- W2000983906 abstract "We have conducted an extensive study of the evolution of surface morphology of single crystal diamond surfaces during sputtering by 20keV Ga+ and Ga++H2O. We observe the formation of well-ordered ripples on the surface for angles of incidence between 40 and 70°. We have also measured sputter yields as a function of angle of incidence, and ripple wavelength and amplitude dependence on angle of incidence and ion fluence. Smooth surface morphology is observed for 70°. The formation and evolution of well-ordered surface ripples is well characterized by the model of Bradley and Harper, where sputter-induced roughening is balanced by surface transport smoothing. Smoothing is consistent with an ion-induced viscous relaxation mechanism. Ripple amplitude saturates at high ion fluence, confirming the effect of nonlinear processes. Differences between Ga+ and Ga++H2O in ripple wavelength, amplitude, and time to saturation of amplitude are consis..." @default.
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- W2000983906 date "2005-11-01" @default.
- W2000983906 modified "2023-09-26" @default.
- W2000983906 title "Morphology evolution on diamond surfaces during ion sputtering" @default.
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- W2000983906 doi "https://doi.org/10.1116/1.2110386" @default.
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