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- W2000985384 abstract "Homoepitaxial growth of 4H-SiC and characterization of deep levels obtained mainly in the authors’ group have been reviewed. The growth rate has been increased to 24 om/h with keeping very good surface morphology and low trap concentration on 8o off-axis 4H-SiC(0001) by hot-wall chemical vapor deposition at 1650oC. The increased growth rate has resulted in the enhanced conversion of basal-plane dislocations into threading edge dislocations in epilayers. The Z1/2 and EH6/7 concentrations can be decreased to about 1·1012 cm-3 by increasing the C/Si ratio during CVD. Extensive investigation on as-grown and electron-irradiated epilayers indicates that both the Z1/2 and EH6/7 centers may be attributed to the same origin related to carbon displacement, probably a carbon vacancy. Deep levels observed in as-grown and irradiated p-type 4H-SiC are also presented." @default.
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- W2000985384 date "2007-09-01" @default.
- W2000985384 modified "2023-09-27" @default.
- W2000985384 title "Growth and Electrical Characterization of 4H-SiC Epilayers" @default.
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- W2000985384 doi "https://doi.org/10.4028/www.scientific.net/msf.556-557.35" @default.
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