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- W2000992274 abstract "It is shown that an Si nanocluster is formed in an amorphous silicon (a-Si) thin film following irradiation using a pulsed KrF excimer laser. The photoluminescence spectrum of the irradiated 70 nm thick a-Si film at a power density of 180 mJ/cm2 at one shot shows two luminescence bands centred at ~1.31 and 1.76 eV. The peak emission wavelength depends on the silicon nanocluster size, which is ~3 – 4 nm. A mechanism for the formation of Si nanoclusters is also proposed." @default.
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- W2000992274 date "1999-01-01" @default.
- W2000992274 modified "2023-10-17" @default.
- W2000992274 title "Formation of Si nanoclusters in amorphous silicon thin films by excimer laser annealing" @default.
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- W2000992274 doi "https://doi.org/10.1049/el:19991361" @default.
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