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- W2000996029 abstract "We have carried out LPE of GaAs using Ga as a solvent in high purity Ar and its mixture with H2. The quality of the layers was compared with that grown in pure H2. The layers grown in Ar showed n-type conductivity. Net carrier concentration and mobility were 3×1014 cm−3 and 4×104 cm2 V−1 s−1 at 77 K which is comparable to that for the layers grown in H2. Photoluminescence measurements reveal that Si is the main acceptor impurity in GaAs layers which were grown in H2 atmosphere. In contrast, C is the main impurity in the layers grown in Ar atmosphere. The impurity incorporation into GaAs layers can be ascribed to the chemical reactions that take place during the LPE process in the growth system which consists of quartz reactor tube, graphite crucible, and Ga solvent." @default.
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- W2000996029 date "1999-03-01" @default.
- W2000996029 modified "2023-10-16" @default.
- W2000996029 title "Residual impurities in high purity GaAs layers grown by liquid phase epitaxy in H2–Ar atmosphere" @default.
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- W2000996029 doi "https://doi.org/10.1016/s0022-0248(98)01083-5" @default.
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