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- W2000999787 abstract "The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga1−xMnxAs, as well as the demonstration of high spin injection efficiency observed from II–VI and III–V DMS [1], [2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have performed on spin injection light emitting diodes using an n-type doped II–VI DMS layer as spin aligner and on p-type doped II–VI magnetic heterostructures: Cd1−xMnxTe quantum wells and Zn1−xMnxTe epilayers." @default.
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- W2000999787 date "2001-07-01" @default.
- W2000999787 modified "2023-09-25" @default.
- W2000999787 title "Applications of II–VI diluted magnetic semiconductors for magneto-electronics" @default.
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- W2000999787 doi "https://doi.org/10.1016/s0038-1098(01)00174-0" @default.
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