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• W2001063104 abstract "We directly observed the transition of crystal growth behavior of Si in a low undercooling region. We succeeded in observing the initiation of faceted dendrite growth from a portion of parallel twins with increasing degrees of undercooling. The critical undercooling for growing a faceted dendrite was experimentally determined to be ΔT = 10 K. We also confirmed that parallel twins associated with faceted dendrite growth were formed between grain boundaries and not at grain boundaries during melt growth. The parallel-twin formation was explained in terms of a model of twin formation on the {1 1 1} facet plane at the growth interface." @default.
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• W2001063104 date "2008-06-01" @default.
• W2001063104 modified "2023-10-16" @default.
• W2001063104 title "In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts" @default.
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• W2001063104 doi "https://doi.org/10.1016/j.actamat.2008.01.038" @default.
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