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- W2001065622 abstract "A technique is described to monitor in situ the variation of the gap height, a mechanical parameter of a microelectronic integrated circuit known as suspended gate field-effect transistor (SGFET), by electrochemical deposition of a metal layer on the gate electrode. During the deposition process, the gap height was measured simultaneously starting from 800 nm down to 200 nm using the capacitance–voltage (CV) measurement technique. As a result of this modification, the threshold voltage has been shifted from over 10 V down to 1 V leading to a decrease of the noise level of the SGFET as well. The modified chips were electrochemically coated with a polymer layer and used as a gas sensor for the lower ppm range." @default.
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- W2001065622 date "1998-05-01" @default.
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- W2001065622 title "In situ control of the electrochemical gap height modification of a suspended gate field-effect transistor by capacitance–voltage measurement technique" @default.
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- W2001065622 doi "https://doi.org/10.1016/s0925-4005(98)00122-1" @default.
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