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• W2001066374 abstract "Dislocation-free GaAs crystals have been obtained by two different ways (doping and necking procedure) in the LEC growth technique. Undoped GaAs crystals with a diameter as high as 15 mm have been grown free of dislocations. It is shown that if thermal stresses determine the dislocation distribution, some important phenomena cannot be explained, and it is suggested that the stoichiometry of the crystal, the behaviour of point defects, the interaction between impurities and point defects at temperatures just below the melting point play an important role." @default.
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• W2001066374 date "1982-04-01" @default.
• W2001066374 modified "2023-09-27" @default.
• W2001066374 title "Dislocations in GaAs" @default.
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• W2001066374 doi "https://doi.org/10.1016/0022-0248(82)90480-8" @default.
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