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• W2001112040 endingPage "2060" @default.
• W2001112040 startingPage "2050" @default.
• W2001112040 abstract "Changes in the gap states in undoped, phosphorus-, and boron-doped a-Si:H produced by light soaking (LS), thermal quenching (Q), and annealing (A) are studied by photomodulation spectroscopy. First a method for analyzing the photomodulation spectra is explained and applied to annealed samples. Then the changes in the spectra produced by LS and Q are analyzed. It is shown that LS increases the density of dangling bonds ${mathit{D}}_{mathit{i}}$ in undoped a-Si:H. In a-Si:H:P, LS increases the density of dangling bonds ${mathit{D}}_{mathrm{P}}$ relative to the density of ${mathrm{P}}_{4}$ states. The LS a-Si:H:P samples also exhibit, in addition to ${mathit{D}}_{mathrm{P}}$ defects, defects with similar properties as ${mathit{D}}_{mathit{i}}$ defects in undoped a-Si:H. This is a strong support for the presence of more than one kind of defect in a-Si:H:P. In a deposited boron-doped a-Si:H a region of photoinduced transmission was observed that disappears with A, LS, or Q. This change is irreversible, and the spectra of A, LS, or Q samples differ very little. The results are compared with the recent work on metastable states based on different methods." @default.
• W2001112040 created "2016-06-24" @default.
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• W2001112040 date "1992-07-15" @default.
• W2001112040 modified "2023-10-11" @default.
• W2001112040 title "Metastable states in undoped and doped<i>a</i>-Si:H studied by photomodulation spectroscopy" @default.
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• W2001112040 doi "https://doi.org/10.1103/physrevb.46.2050" @default.
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