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• W2001121570 abstract "A defect-free nanometer-scale silicon disk (nanodisk) on thin SiO2 film was precisely fabricated by using Cl neutral beam etching of a 3.5–4-nm-thick polycrystalline silicon on 1.4–3-nm-thick underlying SiO2 with a 7-nm-diameter ferritin iron core mask. Kelvin force microscope observations revealed that nanodisks could maintain injected positive and negative charges. Additionally, Coulomb staircases were observed by I-V measurement of a nanodisk at a temperature of 25K. These results indicate that the nanodisk fabricated in this research had a precise quantum effect structure and attained the single electron property. This process has great potential in the development of future quantum effect devices." @default.
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• W2001121570 date "2006-12-04" @default.
• W2001121570 modified "2023-10-18" @default.
• W2001121570 title "Charging and Coulomb staircase effects in silicon nanodisk structures fabricated by defect-free Cl neutral beam etching process" @default.
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• W2001121570 doi "https://doi.org/10.1063/1.2404608" @default.
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