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• W2001175145 abstract "This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Gm decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior." @default.
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• W2001175145 date "2012-04-09" @default.
• W2001175145 modified "2023-10-14" @default.
• W2001175145 title "Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress" @default.
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• W2001175145 doi "https://doi.org/10.1063/1.3697644" @default.
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