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• W2001185655 abstract "Nanocrystalline porous silicon (nc-PSi), a material already widely studied for application in photonics, optoelectronics and sensing devices, is currently under investigation as an active element in photodetection and photovoltaic application as well. Thanks to its unusual properties such as a band gap widening compare to bulk Silicon and its relatively simple and cheap fabrication method, the material could potentially be used as an active top-cell material in multi-junction cells structures. In order to confirm the availability of nc-PSi material as a wide gap absorber for solar cells, free standing layers of the material were fabricated and the results of their optical and photovoltaic characterization are presented in this paper." @default.
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• W2001185655 date "2012-02-01" @default.
• W2001185655 modified "2023-09-25" @default.
• W2001185655 title "Photovoltaic Property of Wide-Gap Nanocrystalline Silicon Layers" @default.
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• W2001185655 doi "https://doi.org/10.1143/jjap.51.02bp05" @default.
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