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- W2001193128 abstract "Rapid solid-state microwave annealing was performed for the first time on N+-, Al+-, and B+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 °C were attained with heating rates exceeding 600 °C/s. An 1,850 °C/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 °C/15 min conventional furnace annealing. For the Al implants, a minimum room-temperature sheet resistance (R s ) of 7 kΩ/□ was measured upon microwave annealing. For the microwave annealing, Rutherford backscattering (RBS) measurements indicated a better structural quality, and secondary-ion-mass-spectrometry (SIMS) boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing." @default.
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- W2001193128 date "2007-02-06" @default.
- W2001193128 modified "2023-10-09" @default.
- W2001193128 title "Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC" @default.
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- W2001193128 doi "https://doi.org/10.1007/s11664-006-0032-1" @default.
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