FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2001193796> ?p ?o ?g. }

• W2001193796 endingPage "095017" @default.
• W2001193796 startingPage "095017" @default.
• W2001193796 abstract "In this paper, the threshold voltage and subthreshold slope of strained-Si channel n-MOSFETs are determined, taking into account quantum-mechanical effects, and the effect of bandgap narrowing due to heavy channel doping and the effect of surface roughness at the Si/SiGe heterointerface for ultra thin channels. Quantum-mechanical effects have been incorporated by considering three components, (1) the modified subband energy of 2D inversion layer charges at the silicon dioxide–silicon interface, (2) the increased effective oxide thickness and (3) the altered value of ground state energy due to surface roughness. The analytical results of threshold voltage and threshold voltage difference are presented with reference to unstrained-Si channel for strained-Si MOSFETs by employing poly-Si gate and titanium nitride gate, the work function of which can be varied over a wide range. In addition, we have predicted the dependence of threshold voltage on different values of oxide thickness, channel doping concentration, and on the molar content, x, of Ge in the Si1−xGex virtual substrate. When compared with the theoretical data of Nayfeh et al our analytical results agree more closely with our experimental results and also with measured and simulated data of threshold voltage for a wide range of devices available in the literature. Furthermore, we have calculated the subthreshold slope of strained-Si channel MOSFETs for different amounts of Ge in the SiGe layer." @default.
• W2001193796 created "2016-06-24" @default.
• W2001193796 creator A5000586827 @default.
• W2001193796 creator A5009941567 @default.
• W2001193796 creator A5030275438 @default.
• W2001193796 creator A5045106640 @default.
• W2001193796 creator A5070926330 @default.
• W2001193796 creator A5075183384 @default.
• W2001193796 creator A5083719805 @default.
• W2001193796 date "2008-08-13" @default.
• W2001193796 modified "2023-10-16" @default.
• W2001193796 title "Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects" @default.
• W2001193796 cites W1503603236 @default.
• W2001193796 cites W1565210720 @default.
• W2001193796 cites W2002742830 @default.
• W2001193796 cites W2005808040 @default.
• W2001193796 cites W2016396155 @default.
• W2001193796 cites W2031766550 @default.
• W2001193796 cites W2057585330 @default.
• W2001193796 cites W2067216657 @default.
• W2001193796 cites W2070597921 @default.
• W2001193796 cites W2078440540 @default.
• W2001193796 cites W2085339560 @default.
• W2001193796 cites W2100507967 @default.
• W2001193796 cites W2113040701 @default.
• W2001193796 cites W2113750010 @default.
• W2001193796 cites W2116377706 @default.
• W2001193796 cites W2118608821 @default.
• W2001193796 cites W2137173887 @default.
• W2001193796 cites W2137900832 @default.
• W2001193796 cites W2138643547 @default.
• W2001193796 cites W2145049646 @default.
• W2001193796 cites W2150097652 @default.
• W2001193796 cites W2168325864 @default.
• W2001193796 cites W1618833644 @default.
• W2001193796 doi "https://doi.org/10.1088/0268-1242/23/9/095017" @default.
• W2001193796 hasPublicationYear "2008" @default.
• W2001193796 type Work @default.
• W2001193796 sameAs 2001193796 @default.
• W2001193796 citedByCount "16" @default.
• W2001193796 countsByYear W20011937962012 @default.
• W2001193796 countsByYear W20011937962013 @default.
• W2001193796 countsByYear W20011937962014 @default.
• W2001193796 countsByYear W20011937962015 @default.
• W2001193796 countsByYear W20011937962016 @default.
• W2001193796 countsByYear W20011937962018 @default.
• W2001193796 countsByYear W20011937962021 @default.
• W2001193796 countsByYear W20011937962022 @default.
• W2001193796 countsByYear W20011937962023 @default.
• W2001193796 crossrefType "journal-article" @default.
• W2001193796 hasAuthorship W2001193796A5000586827 @default.
• W2001193796 hasAuthorship W2001193796A5009941567 @default.
• W2001193796 hasAuthorship W2001193796A5030275438 @default.
• W2001193796 hasAuthorship W2001193796A5045106640 @default.
• W2001193796 hasAuthorship W2001193796A5070926330 @default.
• W2001193796 hasAuthorship W2001193796A5075183384 @default.
• W2001193796 hasAuthorship W2001193796A5083719805 @default.
• W2001193796 hasConcept C103566474 @default.
• W2001193796 hasConcept C107365816 @default.
• W2001193796 hasConcept C119599485 @default.
• W2001193796 hasConcept C121332964 @default.
• W2001193796 hasConcept C127413603 @default.
• W2001193796 hasConcept C156465305 @default.
• W2001193796 hasConcept C159985019 @default.
• W2001193796 hasConcept C165801399 @default.
• W2001193796 hasConcept C172385210 @default.
• W2001193796 hasConcept C192562407 @default.
• W2001193796 hasConcept C195370968 @default.
• W2001193796 hasConcept C26873012 @default.
• W2001193796 hasConcept C2778413303 @default.
• W2001193796 hasConcept C49040817 @default.
• W2001193796 hasConcept C544956773 @default.
• W2001193796 hasConcept C57863236 @default.
• W2001193796 hasConceptScore W2001193796C103566474 @default.
• W2001193796 hasConceptScore W2001193796C107365816 @default.
• W2001193796 hasConceptScore W2001193796C119599485 @default.
• W2001193796 hasConceptScore W2001193796C121332964 @default.
• W2001193796 hasConceptScore W2001193796C127413603 @default.
• W2001193796 hasConceptScore W2001193796C156465305 @default.
• W2001193796 hasConceptScore W2001193796C159985019 @default.
• W2001193796 hasConceptScore W2001193796C165801399 @default.
• W2001193796 hasConceptScore W2001193796C172385210 @default.
• W2001193796 hasConceptScore W2001193796C192562407 @default.
• W2001193796 hasConceptScore W2001193796C195370968 @default.
• W2001193796 hasConceptScore W2001193796C26873012 @default.
• W2001193796 hasConceptScore W2001193796C2778413303 @default.
• W2001193796 hasConceptScore W2001193796C49040817 @default.
• W2001193796 hasConceptScore W2001193796C544956773 @default.
• W2001193796 hasConceptScore W2001193796C57863236 @default.
• W2001193796 hasIssue "9" @default.
• W2001193796 hasLocation W20011937961 @default.
• W2001193796 hasOpenAccess W2001193796 @default.
• W2001193796 hasPrimaryLocation W20011937961 @default.
• W2001193796 hasRelatedWork W2062767191 @default.
• W2001193796 hasRelatedWork W2069916569 @default.
• W2001193796 hasRelatedWork W2073808883 @default.
• W2001193796 hasRelatedWork W2129374741 @default.
• W2001193796 hasRelatedWork W2139230751 @default.

• next