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• W2001224508 abstract "CuInSe 2 (CIS) thin films on glass substrates were successfully grown by the metal organic chemical vapour deposition method by using three precursors [Cu-precursor, trimethyl-indium (TMI) and hydrogen selenide (H 2 Se)]. The flow rates of TMI and H 2 Se can be adjusted independently to gain different lll/VI ratios, which is different from the single-precursor technique. Good chalcopyrite phase from CIS films was demonstrated by X-ray diffraction. The optical band gap of CIS thin films can be adjusted by controlling the growth conditions." @default.
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• W2001224508 date "2009-09-01" @default.
• W2001224508 modified "2023-10-18" @default.
• W2001224508 title "Control of III/VI Ratios in the Preparation of ln2Se3 thin Films" @default.
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• W2001224508 doi "https://doi.org/10.3184/030823409x12498344384795" @default.
• W2001224508 hasPublicationYear "2009" @default.
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