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• W2001231177 abstract "A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The growth rate achieved for this process was about 10 μm/h. The process consists of silane/propane/hydrogen chemistry with HCl used as a growth additive to increase the growth rate. 3C-SiC has also been grown on 22, 52 and 123 +m deep etched MEMS structures formed by DRIE of (100) Si at a rate of about 8 +m/h. Secondary electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to analyze the quality of the 3C-SiC films." @default.
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• W2001231177 date "2006-10-01" @default.
• W2001231177 modified "2023-10-17" @default.
• W2001231177 title "Growth of 3C-SiC on Si Molds for MEMS Applications" @default.
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• W2001231177 doi "https://doi.org/10.4028/www.scientific.net/msf.527-529.307" @default.
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