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- W2001231874 abstract "We present the characteristics of a novel AlN/AlGaN/GaN metal insulator semiconductor heterostructure field-effect transistor (MIS-HFET) structure with an AlN cap layer as a gate insulating layer. The gate leakage current for the AlN/AlGaN/GaN MIS-HFET was shown to be more than three orders of magnitude smaller than that for the AlGaN/GaN HFET at around -20 V gate bias. This demonstrates that the wide band gap AlN/AlGaN gate structure suppresses the gate leakage current, resulting in improved device characteristics compared with common HFETs in this study. A maximum gm of 134 mS/mm was observed at a 4 V drain-source bias of a MIS-HFET with a gate length (Lg)=0.85 µm, gate width (Wg)=57 µm, and drain-source spacing (Lds)=3 µm. A threshold voltage (Vt) of -3.06 V and a maximum channel current of 551 mA/mm were observed." @default.
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- W2001231874 date "2002-07-15" @default.
- W2001231874 modified "2023-09-23" @default.
- W2001231874 title "AlN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor" @default.
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- W2001231874 doi "https://doi.org/10.1143/jjap.41.4481" @default.
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