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• W2001232432 abstract "MgxZn1−xO thin films were prepared on quartz substrates by a sol–gel dip-coating process. Structural and optical properties were investigated using X-ray diffraction, optical absorbance, and photoluminescence (PL). Results showed that the MgxZn1−xO thin films retained the ZnO hexagonal crystal structure with very little lattice deformation compared to the pure ZnO films. The optical band-gap of the MgxZn1−xO thin films varied from 3.28 to 3.73 eV as the Mg content x was increased from 0.0 to 0.3, and it can be formulated using the equation Eg=3.28+1.53x. Results also showed good PL characteristics of these films with strong band-edge UV emission. Like the absorption, the emission energy also shifted towards higher photon energy as the Mg content x in the film was increased." @default.
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• W2001232432 date "2004-05-01" @default.
• W2001232432 modified "2023-09-24" @default.
• W2001232432 title "Characterization of MgxZn1−xO thin films prepared by sol–gel dip coating" @default.
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• W2001232432 doi "https://doi.org/10.1016/j.jcrysgro.2004.02.083" @default.
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