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- W2001245040 abstract "Piezoelectric materials are widely used in various applications including sensors, actuators, and energy harvestingdevices. Energy harvesting devices can be used to power autonomous wireless sensors that are placed in remote ordifficult to reach areas, where replacing a battery is not practical or feasible. In this paper the authors present work on thefabrication and design of a CMOS compatible Aluminium Nitride (AlN) piezoelectric based MEMS cantilever structurefor harvesting vibrational energy. In order for AlN to be piezoelectric it needs to be highly structured in the c-axis (002)crystal orientation. The deposition of highly structured AlN and its polarity is dependent on the underlying films andtheir crystal orientation. XRD rocking curve results from this paper show a highly oriented (002) AlN film with aFWHM value of 2.1°. The MEMS cantilever structures were fabricated using standard MEMS fabrication techniquesusing SOI wafers. By optimising the AlN material deposition process and the stress values in the cantilever structures theauthors were able obtain a power density of 2.55 mW/ cm 3 /g 2 for a single MEMS structure with 500 nm thick AlN. Thecantilever structure had a resonant frequency of approximately 150 Hz. In this paper the authors also investigatedmethods to increase the bandwidth of the cantilever structures, by building an array of devices with slightly varyinglength masses." @default.
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- W2001245040 date "2013-05-17" @default.
- W2001245040 modified "2023-09-27" @default.
- W2001245040 title "CMOS compatible low-frequency aluminium nitride MEMS piezoelectric energy harvesting device" @default.
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- W2001245040 doi "https://doi.org/10.1117/12.2016469" @default.
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