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- W2001261266 abstract "Ba 0.65 Sr 0.35 TiO 3 (BST) thin films have been fabricated on silicon field emitter arrays (FEAs) using sol-gel coating for electron emission applications. The BST coatings exhibit the perovskite structure when annealed between 650 and 700°C, and an interfacial reaction occurs when annealed above 750°C. The threshold electric field is lowered from 36 V/μ m for bare silicon tips to 19 V/μ m for BST-coated silicon tips. The oxygen vacancy concentration increases for BST thin films annealed from 600 to 750°C, and decreases above 750°C, leading to the Fermi energy shift. The electron emission behavior is correlated to both the microstructure and electronic structure of the BST thin films." @default.
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- W2001261266 date "2006-06-01" @default.
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- W2001261266 title "Annealing Temperature Effect on Field Emission of Silicon Emitter Arrays with Sol-Gel (Ba<sub>0.65</sub>Sr<sub>0.35</sub>)TiO<sub>3</sub>Coatings" @default.
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- W2001261266 doi "https://doi.org/10.1080/00150190600695941" @default.
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