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• W2001262681 abstract "Laser-induced breakdown spectroscopy of silicon was performed using a nanosecond pulsedfrequency doubled Nd :YAG (532 nm) laser. The temporal evolution of the laser ablationplumes was characterized under a range of low pressures. Electron densities were determinedfrom the Stark broadening of the Si (I) 288.16 nm emission line and were found to be in therange 2.79 × 1016 cm−3 to 5.59 × 1019 cm−3. Excitation temperatures of 9000–21 000K werecalculated using the Si (I) 288.16 nm emission line to continuum ratio. The morphology of thelaser plume, observed with respect to time, was seen to be strongly dependent on the ambientpressure. The density and temperature of the plasma were also found to vary critically withplasma morphology. Three ambient pressure regimes were identified where the plasmaevolution was observed to differ markedly. Requirements for the existence of local thermalequilibrium conditions in the laser-induced plasmas are discussed with respect to these results." @default.
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• W2001262681 date "2009-07-22" @default.
• W2001262681 modified "2023-09-26" @default.
• W2001262681 title "The effect of ambient pressure on laser-induced silicon plasma temperature, density and morphology" @default.
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• W2001262681 doi "https://doi.org/10.1088/0022-3727/42/16/165202" @default.
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