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• W2001266902 abstract "Sputtered metal gratings have been realized using lift-off process based on bilayer resist electron beam lithography (EBL). The lithography mask is composed of PMMA (poly(methylméthacrylate)) layer deposited under HSQ (hydrogen silsesquioxane) inorganic resist. EBL is performed in HSQ, whereas PMMA is used to ease final lift-off. We demonstrate the possibility of patterning by lift-off metals with different sputtering yields and deposition conditions. Gratings with period of 200 nm and filling factor of 50% are obtained." @default.
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• W2001266902 date "2009-11-01" @default.
• W2001266902 modified "2023-10-14" @default.
• W2001266902 title "Sputtered metal lift-off for grating fabrication on InP based optical devices" @default.
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• W2001266902 doi "https://doi.org/10.1016/j.mee.2009.03.133" @default.
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