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• W2001304312 abstract "W/Pt contacted GaN Schottky diodes show forward current changes of >1 mA at low bias(3 V) in the temperature range 350–600 °C when the measurement ambient is changed from pure N2 to 10%H2/90%N2. In this paper we show that use of a metal-oxide-semiconductor (MOS) diode structure with Sc2O3 gate dielectric and the same W/Pt metallization show these same reversible changes in forward current upon exposure to H2-containing ambients over a much broader temperature range (90 to >625 °C). The increase in current in both cases is the result of a decrease in effective barrier height of the MOS and Schottky gates of 30–50 mV 10%H2/90%N2 ambients relative to pure N2 and is due to catalytic dissociation of the H2 on the Pt contact, followed by diffusion to the W/GaN or Sc2O3/GaN interface. The presence of the oxide lowers the temperature at the hydrogen which can be detected and in conjunction with the use of the high temperature stable W metallization enhances the potential applications of these wide bandgap sensors." @default.
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• W2001304312 date "2005-01-01" @default.
• W2001304312 modified "2023-10-18" @default.
• W2001304312 title "Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection" @default.
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• W2001304312 doi "https://doi.org/10.1016/j.snb.2004.05.018" @default.
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