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- W2001308075 endingPage "100205" @default.
- W2001308075 startingPage "100205" @default.
- W2001308075 abstract "This paper reviews the various types of structural defects observed by transmission electron microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by high nitrogen pressure solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed." @default.
- W2001308075 created "2016-06-24" @default.
- W2001308075 creator A5028794636 @default.
- W2001308075 date "2014-09-08" @default.
- W2001308075 modified "2023-09-27" @default.
- W2001308075 title "Structural defects in GaN revealed by transmission electron microscopy" @default.
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- W2001308075 doi "https://doi.org/10.7567/jjap.53.100205" @default.
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