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• W2001380732 abstract "The microstructure of InxGa1−xN samples grown by electron cyclotron resonance plasma assisted molecular beam epitaxy is studied, as a function of the In concentration, using extended X-ray absorption fine structure spectroscopy (EXAFS), TEM and X-ray diffraction (XRD). The electron and XRD patterns were used in order to determine the correct composition of the samples. Phase separation phenomena are observed in the XRD pattern of the sample with the highest In content. The EXAFS analysis reveals that for In concentrations up to 20%, the cation–N distances do not vary with the sample composition. Contrary to that, the cation–cation distances depend on the In concentration and more specifically RGa–Ga<RGa–In<RIn–In." @default.
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• W2001380732 date "2003-01-01" @default.
• W2001380732 modified "2023-10-16" @default.
• W2001380732 title "Microstructural characterization of InxGa1−xN MBE samples" @default.
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• W2001380732 doi "https://doi.org/10.1016/s0168-583x(02)01706-8" @default.
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